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  inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor BUY24 description collector-emitter breakdown voltage- : v (br)ceo = 60v(min.) low collector saturation voltage- : v ce(sat) = 1.0v@ i c = 5a applications designed for use switching and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base v oltage 120 v v ceo collector-emitter v oltage 60 v v ebo emitter-base voltage 6 v i c collector current-continuous 5 a p c collector power dissipation @t c 75 15 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 5.0 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor BUY24 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; i b = 0 60 v v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 120 v v (br)ebo emitter-base breakdown voltage i e = 1m a; i c = 0 6 v v ce( sat )-1 collector-emitter saturation voltage i c = 2a; i b = 0.2a 0.6 v v ce( sat )-2 collector-emitter saturation voltage i c = 5a; i b = 0.5a 1.0 v v be( sat )-1 base-emitter saturation voltage i c = 2a; i b = 0.2a 1.2 v v be( sat )-2 base-emitter saturation voltage i c = 5a; i b = 0.5a 1.3 v i cbo collector cutoff current v cb =60v; i e = 0 v cb =60v; i e = 0; t c = 125 10 1.0 a ma h fe-1 dc current gain i c = 0.5a ; v ce = 2v 45 h fe-2 dc current gain i c = 2a; v ce = 2v 40 h fe-3 dc current gain i c = 5a; v ce = 2v 40 f t current-gainbandwidth product i c = 0.5a; v ce = 5v 100 mhz c ob collector output capacitance i e = 0; v cb = 10v 35 pf switching times t on turn-on time i c = 5a; i b1 = 0.5a 0.35 s t off turn-off time i c = 5a; i b1 = -i b2 = 0.5a 0.65 s


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